| Original document(27 pages) 中文版 |
The multiple active pixel sensors are prepared on the surface of the semiconductor wafer by using the method. The wafer includes the P type substrate, the active pixel sensing area and the peripheral circuit. The active pixel sensing block mask (APSB mask) is formed int he first active pixel sensing area so as to cover the active pixel sensing area. The N type trap is formed in the area uncovered by the said APSB mask. Then, the APSB mask is removed. The second APSB mask and at least one N type trap mask are formed to cover the active pixel sensing area and the non-P type trap area in the peripheral circuit, and the P type trap is formed in the above uncovered area. Finally, the masks are removed, and the light sensing diode and the CDMOS transistor are formed in the active pixel sensing area. |
Application Number
申请号 |
02131816 |
Application Date
申请日 |
2002.09.06 |
| Title 名称 |
Method for manufacturing active picture-element sensor |
Publication Number
公开号 |
1405891 |
Publication Date
公开日 |
2003.03.26 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L21/82,H01L27/14,H01L31/00 |
Applicant(s) Name
申请人 |
Lianhua Electronics Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Chen Zhongyao, Lin Zhenbin |
| Attorney & Agent 代理人 |
chen gong |
| More information 更 多 信 息 |
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