Original document(16 pages) Authorized document(17 pages) 中文版
    Herein disclosed is a MOSFET which has a semiconductor region of low impurity concentration and of the same conductivity type as the source and drain regions, and source and drain regions of high impurity concentration formed apart from the gate electrode, to reduce the short channel effect and to raise the breakdown voltage of a drain junction.
Application Number
申请号		 85108671 Application Date
申请日		 1985.11.27
Title 名称 Semiconductor integrated circuit device and manufacturing process thereof
Publication Number
公开号		 1001077 Publication Date
公开日		 1986.06.10
Approval Pub. Date 1990.03.14 Granted Pub. Date 1990.03.14
International Classification 分类号 H01L21/72;H01L27/04
Applicant(s) Name
申请人		 Hitachi Ltd.
Address 地址
Inventor(s) Name 发明人 Shuji Ikeda
Attorney & Agent 代理人 ZHANG WEIMIN
More information 更  多  信  息


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