Original document(16 pages) Authorized document(15 pages) 中文版
    A process for the reduction of defect formation in conductive layers during patterning, alloying and passivation. A film of low temperature spin-on-glass containing dye is formed on the conductive layer prior to patterning and any high temperature process greater than 200 DEG C. Hermetic passivation is achieved by depositing on the conductive layer a composite film consisting of a lower, tensile layer and an upper, compressive layer with the net force of the passivation film being tensile.
Application Number
申请号		 85104650 Application Date
申请日		 1985.06.15
Title 名称 Mos rear end processing
Publication Number
公开号		 1001074 Publication Date
公开日		 1986.06.10
Approval Pub. Date 1989.12.13 Granted Pub. Date 1989.12.13
International Classification 分类号 H01L21/31;H01L21/322
Applicant(s) Name
申请人		 Intel Corp .
Address 地址
Inventor(s) Name 发明人 A. Gasser;Leopoldo D. Yau Robert
Attorney & Agent 代理人 XIAO JUCHANG
More information 更  多  信  息


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