Original document(81 pages) Authorized document(81 pages) 中文版
    A semiconductor memory circuit includes memory arrays . Each of the memory arrays has associated therewith shift registers. Transfer gates are disposed between the memory arrays and the associated shift registers. A control circuit is provided for receiving an external transfer signal and transferring the data between the arrays and the associated shift registers. The shift registers are clocked in response to receiving an external shift clock signal to serially output data therefrom. A delay circuit is provided for delaying shifting of data for a predetermined duration to ensure that a complete transfer of data has been effected. Transfer of data is inhibited until the occurrence of the XBOOT signal by circuit to provide for early occurrence of the transfer signal. Data access is maintained by a delay circuit to accommodate late occurrence of the transfer signal by delaying the internal row address strobe.
Application Number
申请号		 86100419 Application Date
申请日		 1986.01.21
Title 名称 Serial accessed semiconductor memory
Publication Number
公开号		 1004157 Publication Date
公开日		 1986.10.15
Approval Pub. Date 1990.06.06 Granted Pub. Date 1990.06.06
International Classification 分类号 G11C8/02
Applicant(s) Name
申请人		 Texas Instruments Incorporated
Address 地址
Inventor(s) Name 发明人 Fredrick A. Valente;Raymond Pinkham
Attorney & Agent 代理人 FENG XIAOMING
More information 更  多  信  息


 Related patents information
Google
Note:All patent data come from State Intellectual Property Office of the People's Republic of China. If there were discrepancies between here and the State Intellectual Property office, the later is more accurate. The patent data is only for public exchange and learning purposes. We are not responsible for the adverse consequences with unverified use of the data.