On the basis of this method, a MOSFET is tested under the conditions of high temperature and high gate-voltage. Threshold voltages being compared before and after testing, the reliability of a MOSFET can be identified. Those transistors which are of unstable property and less reliability can be easily rejected. Whereas the high-quality transistors can not be damaged. The method has such features as follow: sensitive response to parameters, high efficiency of testing, short period, non-destructiveness, simple instruments and apparatus, operating easily and saving the screening cost. As there is no national standard for examine of MOSFET at present, it can be used as routine test method. |