| Original document(11 pages) Authorized document(11 pages) 中文版 |
Because of use of protective method of silicon controlled current divider, sampling of common mode, etc in this circuit, high-power transistors can be protected when excess voltage and excess current or one-shot breakdown and second breakdown occur in it. It is suitable for the high-power transistor used as switching element, specially for that which works under inductive load. |
Application Number
申请号 |
85108410 |
Application Date
申请日 |
1985.11.25 |
| Title 名称 |
Protective circuit for high-power transistor |
Publication Number
公开号 |
1011430 |
Publication Date
公开日 |
1987.06.03 |
| Approval Pub. Date |
|
Granted Pub. Date |
1989.08.30 |
| International Classification 分类号 |
H03K17/08 |
Applicant(s) Name
申请人 |
Water Power Programme Designing Inst., Ministry of Communications |
| Address 地址 |
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| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
WANG XIAOPEI RAO HUANGSHANG |
| More information 更 多 信 息 |
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