Original document(17 pages) Authorized document(15 pages) 中文版
    The present invention relates to a method of forming a solid-state image pickup device. A part of Si, which is a component element of a P-type wafer, is converted into P, which is an N-type impurity, by nucleus conversion induced by the application of a neutron beam and an Si substrate 4 whose conductivity type is converted into N-type and whose specific resistivity is 10-100 OMEGA.cm, preferably 40-60 OMEGA.cm, is formed. On the Si substrate obtained as described above, a solid-state image pickup device is formed comprising a number of photodetecting parts, a vertical shift registors, a horizontal shift registor.
Application Number
申请号		 86107824 Application Date
申请日		 1986.11.12
Title 名称 Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor
Publication Number
公开号		 1011417 Publication Date
公开日		 1987.06.03
Approval Pub. Date 1990.10.03 Granted Pub. Date 1990.10.03
International Classification 分类号 C30B31/20;H01L27/14
Applicant(s) Name
申请人		 Sony Corp.
Address 地址
Inventor(s) Name 发明人 Nobuyuki Izawa;Toshihiko Suzuki;Yasaburo Kato
Attorney & Agent 代理人 XIAO CHUNJING
More information 更  多  信  息


 Related patents information
Production of high-oxygen-content silicon monocrystal substrate for semiconductor devices
Google
Note:All patent data come from State Intellectual Property Office of the People's Republic of China. If there were discrepancies between here and the State Intellectual Property office, the later is more accurate. The patent data is only for public exchange and learning purposes. We are not responsible for the adverse consequences with unverified use of the data.