| Original document(20 pages) 中文版 |
The present invention relates to a method of manufacturing a compound semiconductor wherein a compound semiconductor substrate or compound semiconductor basic film is irradiated with III-group or V-group molecular beam before they are epitaxially grown and after removing any impurity atoms on the surface, and a III-group or V-group compound semiconductor thin film is grown on a compound semiconductor substrate or compound semiconductor basic film. |
Application Number
申请号 |
86106177 |
Application Date
申请日 |
1986.09.09 |
| Title 名称 |
Method of growth of thin film layer for use in a composite semiconductor |
Publication Number
公开号 |
1011416 |
Publication Date
公开日 |
1987.06.03 |
| Approval Pub. Date |
1990.02.28 |
Granted Pub. Date |
1990.02.28 |
| International Classification 分类号 |
H01L21/203 |
Applicant(s) Name
申请人 |
Sumitomo Electric Industries, Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Yuichi Matsui |
| Attorney & Agent 代理人 |
XIAO CHUNJING |
| More information 更 多 信 息 |
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