| Original document(6 pages) 中文版 |
The invention is a chemical vapour silicon deposition process in the manufacture of semiconductor device and integrated circuit, the purpose of which is to realize the semiconductive material structure of "monocrystalline silicon/insulating material/monocrystalline silicon'. The invention is characterized by making the structural epitaxy to be accomplished in one step. The monocrystalline growth rate fast, the thickness homogeneous, and the quality superior; simple equipment, convenient for operation, no corrosiveness on insulating substrate by vapour phase and easy of use in production. |
Application Number
申请号 |
86100027 |
Application Date
申请日 |
1986.01.06 |
| Title 名称 |
Mixed source two sided silicon monocrystalline growth on insulating substrate |
Publication Number
公开号 |
1012098 |
Publication Date
公开日 |
1987.07.15 |
| Approval Pub. Date |
|
Granted Pub. Date |
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| International Classification 分类号 |
C30B25/02,C30B25/22 |
Applicant(s) Name
申请人 |
Jilin Univ. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Quan Baofu, Tang Guangping |
| Attorney & Agent 代理人 |
YANG DESHENG |
| More information 更 多 信 息 |
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