| Original document(12 pages) Authorized document(11 pages) 中文版 |
The invented method for prepg. high critical temp. (90K) super-conductive film adopts super-vacuum system, single compound target, high atmospheric pressure low voltage d.c. magnetic controlled spattering, in situ epitaxial growing, and prepn. technology of in situ low temp. heat treatment. It is used for prepg. MBa2Cu3O7 type high critical temp. super-conductive oxide film (M=Y,EU,Gd,Tb,Dy,Ho,Er,Tm,Yb). The zero electric resistance critical temp. is as high as 92.7K, 77K, and critical (current density is up to 3.6 mA/Cm2. The invented film can be used in the prepn. of super-conductive electronic components and combined electronic components of super-conductor-semi-conductor. |
Application Number
申请号 |
90101675 |
Application Date
申请日 |
1990.03.28 |
| Title 名称 |
Method for preparing high critical temp. superconductive film |
Publication Number
公开号 |
1045311 |
Publication Date
公开日 |
1990.09.12 |
| Approval Pub. Date |
|
Granted Pub. Date |
1992.07.08 |
| International Classification 分类号 |
H01B12/06,H01L39/12,H01L39/24 |
Applicant(s) Name
申请人 |
Physical Inst., Chinese Academy of Sciences |
| Address 地址 |
100080 |
| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
ZHANG AILIAN |
| More information 更 多 信 息 |
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