Original document(42 pages)  中文版
    A nonvolatile semiconductor memory includes a trench isolation provided in a semiconductor substrate and an interlayer insulator provided on the semiconductor substrate. The trench isolation defines an active area extending in a first direction at the semiconductor substrate. The interlayer insulator has a wiring trench extending in a second direction intersecting the first direction. A first conductive material layer is provided at the cross-point of the active area and the wiring trench so that it is insulated from the active area. A second conductive material layer is provided in the wiring trench so that it is insulated from the first conductive material layer. A metal layer is provided in the wiring trench so that it is electrically in contact the second conductive material layer.
Application Number
申请号		 02142997 Application Date
申请日		 2002.06.26
Title 名称 Nonvolatile semiconductor memory and its manufacturing method
Publication Number
公开号		 1414637 Publication Date
公开日		 2003.04.30
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/8239;H01L27/10
Applicant(s) Name
申请人		 Toshiba K.K.
Address 地址
Inventor(s) Name 发明人 Aritome Seiichi
Attorney & Agent 代理人 du rixin
More information 更  多  信  息


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