Original document(30 pages) Authorized document(31 pages) 中文版
    A high-frequency semiconductor device such that the current concentration of a multifinger HBT is suppressed, the deterioration of noise characteristics, gain, and power efficiency is improved. A basic HBT (14) constituting the first-stage multifinger HBT (12) of an amplifier (10) is composed of an HBT (14a) and an emitter resister (14b) connected to the emitter of the HBT (14a). A basic HBT (18) constituting the output-stage multifinger HBT (16) of the amplifier (10) is composed of an HBT (18a) and a base resistor (18c) connected to the base of the HBT (18a). The high-frequency semiconductor device is useful for a high-output power amplifier used for satellite communication, ground microwave communication, and mobile communication, or the like.
Application Number
申请号		 01806367 Application Date
申请日		 2001.05.11
Title 名称 High-frequency semiconductor device
Publication Number
公开号		 1416616 Publication Date
公开日		 2003.05.07
Approval Pub. Date 2006.05.10 Granted Pub. Date 2006.05.10
International Classification 分类号 H03F3/195;H01L29/737;H01L29/205
Applicant(s) Name
申请人		 Mitsubishi Denki K.K.
Address 地址
Inventor(s) Name 发明人 Mori Kazutomi;Shinjo Shintaro;Maemura Kousei
Attorney & Agent 代理人 liu zongjie wang zhongzhong

  
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