Original document(32 pages) Authorized document(32 pages) 中文版
    Title: Method for manufacturing a highly intergrated semiconductor device
Application Number
申请号		 94104480 Application Date
申请日		 1994.04.08
Title 名称 Method for manufacturing a highly intergrated semiconductor device
Publication Number
公开号		 1098821 Publication Date
公开日		 1995.02.15
Approval Pub. Date Granted Pub. Date 2000.03.22
International Classification 分类号 H01L21/8242
Applicant(s) Name
申请人		 Samsung Electronics Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Tae-Hyuk Ahn, In-Ho Nam
Attorney & Agent 代理人 WANG YIPING

  
Semiconductor memory device with stacked capacitor cells and method for manufacturing same
Wire dispensing board for electric test and manufacture of same
A capillary for a wire bonding apparatus and a method for forming an electric connection bump using the capillary
Semiconductor integrated circuit, semiconductor device, transistor, and process for fabricating the same
Electron beam tubes
A color cathode ray tube
Magnetic blowout device of miniature circuit breaker with plastic shell
Dubbing circuit in Hi-Fi video cassette player
Method for controlling rotation of an optical disk and apparatus therefor
Disc playing equipment
Google
Note:All patent data come from State Intellectual Property Office of the People's Republic of China. If there were discrepancies between here and the State Intellectual Property office, the later is more accurate. The patent data is only for public exchange and learning purposes. We are not responsible for the adverse consequences with unverified use of the data.