The invention uses multiple beam implantation and dynamic blend technology to solve the difficult problems of vacuum matching (10 to the power -3 - 10 to the power -7 Pa) in the dynamic blend process of high vacuum arc metallic plasma deposition beam and ionic beam, and chemical proportion and activity in the formation proces of multiple element compound. It realizes high quality (Lc not less than 10 to the power -4 gf) high efficiency (deposition rate 10-50 Angstrom/s) dynamic blend new process, and it can be used for multiple element surface ceramic or alloy conversion and material surface modification. |