| Original document(19 pages) Authorized document(18 pages) 中文版 |
An IC comprises a first double floating grid storage crystal cell with a first floating grid isolated from a second floating grid aiming at storing at least one bit data, a second double floating grid storage crystal cell with a third floating grid isoalted from a fourth floating grid aiming at storing at least a bit of data in which the first and second double floating grids storage crystal cells share a control grid and the second of the first double shares an oxide layer with the third of the second double floating grid storage crystal cell and the oxide layer electricity isolating the second and third floating grids from the control grid. |
Application Number
申请号 |
02120020 |
Application Date
申请日 |
2002.05.15 |
| Title 名称 |
Integrated circuit with double floated gate-pole storage crystal cell and manufacturing method thereof |
Publication Number
公开号 |
1423339 |
Publication Date
公开日 |
2003.06.11 |
| Approval Pub. Date |
|
Granted Pub. Date |
2005.07.27 |
| International Classification 分类号 |
H01L27/112,H01L27/10,H01L21/82,H01L21/8246 |
Applicant(s) Name
申请人 |
Huabang Electronics Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
ren yongwu |
| More information 更 多 信 息 |
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