| Original document(7 pages) 中文版 |
A method for fabricating a semiconductor device including a silicon substrate includes forming a thin Oxide base film on a substrate, and then annealing the substrate in ammonia. FET gates are then conventionally formed over the gate insulator. The resultant gate insulator is electrically insulative without degrading performance with respect to a conventioanal gate oxide insulator. |
Application Number
申请号 |
00816802 |
Application Date
申请日 |
2000.12.05 |
| Title 名称 |
Method for establishing ultra-thin gate insulator using anneal in ammonia |
Publication Number
公开号 |
1423832 |
Publication Date
公开日 |
2003.06.11 |
| Approval Pub. Date |
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Granted Pub. Date |
|
| International Classification 分类号 |
H01L21/28 |
Applicant(s) Name
申请人 |
Advanced Micro Devices, Inc. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
E.K. Ibok |
| Attorney & Agent 代理人 |
cheng wei |
| More information 更 多 信 息 |
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