Original document(11 pages)  中文版
    A structure of non-volatile memory which nitrile tunnel layer is composed of substrate, nitride tunnel layer on the substrate, charge trap layer on said tunnel layer, dielectric layer on said charge trap layer, grid conductor layer on said dielectric layer, source and drain areas at both sides of grid structure consisting of said tunnel, charge trap, dielectric and grid conductor layers, and channel area under said grid structure and between source and drain areas.
Application Number
申请号		 01140325 Application Date
申请日		 2001.12.11
Title 名称 Non-valatile memory structure with nitride tunnel penetrating layer
Publication Number
公开号		 1424765 Publication Date
公开日		 2003.06.18
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L27/112
Applicant(s) Name
申请人		 Wanghong Electronic Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Fan Zuohong, Ye Yanhong
Attorney & Agent 代理人 wang huaqiang

  
Non-volatility memory structure
Manufacturing method of flash storage having separated floating grid and its structure
Method for making substrate/silicone oxide/silicon nitride/silcon oxide/silicon module
Method for mfg. semiconductor devcie used in system chip
Structure and manufacture of shaded ROM
Method for reducing device size using reducing drain electrode inplanting range
Method for manufacturing double-diffused drain electrode
SNNNS non-volatile memory unit data writing-in and deleting method
Non-volatile memory assembly with multiple gate-pole insalation layers
Forming method for float gate of memory
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