Original document(6 pages) Authorized document(6 pages) 中文版
    The ordered array and pattern of nanoparticles formed by gas-phase or liquid-phase deposition is used to replace the mask generated by exposure used in photoetch technology, resulting in structural size less than 10 nm. It features that the copolymer film is used as template to guide the assembling of nanoparticles. Its advantage is high versatility to different substrates.
Application Number
申请号		 02136120 Application Date
申请日		 2002.07.19
Title 名称 Photoetching method for nanoparticle pattern based on self organization
Publication Number
公开号		 1391264 Publication Date
公开日		 2003.01.15
Approval Pub. Date Granted Pub. Date 2005.07.27
International Classification 分类号 H01L21/308,H01L21/32,H01L21/467,H01L21/475,C23F1/02
Applicant(s) Name
申请人		 Huahong (Group) Co Ltd, Shanghai
Address 地址 200020
Inventor(s) Name 发明人 Han Min
Attorney & Agent 代理人 lu fei tao jinlong
More information 更  多  信  息


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