Original document(16 pages)  中文版
    A method for preventing over-etching of the window on dielectric layer includes such steps as providing a semiconductor substrate with at least one internal connection wire on its surface, generating stress buffering layer, generating etching barrier layer, generating dielectric layer, flattening, and etching window on dielectric layer. Its advantages are less leakage, and high reliability.
Application Number
申请号		 01118679 Application Date
申请日		 2001.06.07
Title 名称 Process for preventing over-etch of window in dielectric layer and its structure
Publication Number
公开号		 1391269 Publication Date
公开日		 2003.01.15
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/768
Applicant(s) Name
申请人		 Xitong Science and Technology Co Ltd
Address 地址
Inventor(s) Name 发明人 Xu Zhenqiu, Zhong Zhenhui
Attorney & Agent 代理人 liu chaohua
More information 更  多  信  息


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