Original document(22 pages) Authorized document(26 pages) 中文版
    The magneto-resistance effect film of the present invention comprises a first magnetic layer consisting of a perpendicularly magnetized film; a second magnetic layer consisting of a perpendicularly magnetized film stacked above said first magnetic layer; a non-magnetic layer sandwiched between said first and second magnetic layers; and a first magnetic region formed in granular shape between one of said first and second magnetic layers and the non-magnetic layer and having a spin polarization greater than that of the one of the first and second magnetic layers, wherein said first magnetic region is exchange-coupled with the one of the first and second magnetic layers.
Application Number
申请号
02122710 Application Date
申请日
2002.06.07
Title 名称 Magnetic resistance effect film and memory therewith
Publication Number
公开号
1391294 Publication Date
公开日
2003.01.15
Approval Pub. Date 2005.09.28 Granted Pub. Date 2005.09.28
International Classification 分类号 H01L43/08;G11C11/15
Applicant(s) Name
申请人
Canon K.K.
Address 地址
Inventor(s) Name 发明人 Ikida Kiji
Attorney & Agent 代理人 wang yonggang
More information 更  多  信  息


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