Original document(38 pages) Authorized document(44 pages) 中文版
    This invention disclosed a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor deposition of a material to create a low stiction surface. It also discloses chemicals which are effective in imparting an anti-stiction property to the chip. These include polyphenylsiloxanes, silanol terminated phenylsiloxanes and similar materials.
Application Number
申请号		 01804444 Application Date
申请日		 2001.01.29
Title 名称 Process for wafer level treatment to reduce stiction and passivate micromachined surfaces and compound used therefor
Publication Number
公开号		 1397091 Publication Date
公开日		 2003.02.12
Approval Pub. Date 2007.05.02 Granted Pub. Date 2007.05.02
International Classification 分类号 H01L21/31;H01L21/469;H01L21/00
Applicant(s) Name
申请人		 Analag Devices Inc.
Address 地址
Inventor(s) Name 发明人 John R. Martin
Attorney & Agent 代理人 guo xiaodong
More information 更  多  信  息


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