Disclosed is a bipolar transistor (10). By optimizing the layout, the product of the base collector capacity and the resistance of the collector can be reduced, thereby improving decisive transistor parameters. The bipolar transistor (10) comprises an emitter (E) (20) which is composed of several emitter elements (22,25, 26), several base contacts (B) (40,41) and several collector contacts (C) (50), said elements being used to form transistor layouts arranged according to a certain order. According to the invention, the emitter (20) has at least one closed configuration (21). The at least one emitter configuration (21) defines at least one inner emitter area (27) which can be subdivided into several partial areas (28). At least one of the base contacts (41) is arranged inside (27) the emitter. At least one other base contact (40) and the collector contacts (50) are arranged outside the emitter configuration (21). |