| Original document(66 pages) 中文版 |
A layer forming method is disclosed which comprises the steps of supplying power of not less than 1 W/cm<2> at a high frequency voltage exceeding 100 kHz across a gap between two electrode opposed to each other at atmospheric pressure or at approximately atmospheric pressure to induce a discharge, generating a reactive gas in a plasma state by the charge, and exposing a substrate to the reactive gas in a plasma state to form a layer on the substrate. |
Application Number
申请号 |
01804728 |
Application Date
申请日 |
2001.12.06 |
| Title 名称 |
Method for forming thin film, article having thin film, optical film, dielectric coated electrode, and plasma discharge processor |
Publication Number
公开号 |
1398305 |
Publication Date
公开日 |
2003.02.19 |
| Approval Pub. Date |
|
Granted Pub. Date |
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| International Classification 分类号 |
C23C16/505;G02B1/10 |
Applicant(s) Name
申请人 |
Konica Corp |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Fukuda Kazuhiro;Kondo Yoshikazu;Murakami Takashi |
| Attorney & Agent 代理人 |
wang sibeng |
| More information 更 多 信 息 |
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