| Original document(93 pages) Authorized document(99 pages) 中文版 |
Steps are provided by etching a first III nitride compound semiconductor layer (31) to an insular form, such as a dot, stripe or lattice, and a layer different from the layer (31) is formed on the bottom so as to be exposed. A second III nitride compound semiconductor (32) is laterally epitaxial-grown with the upper and side surfaces of the upper treads of steps as nuclei to thereby bury step portions and then allow it to grow upward. The upper part of a portion where the second semiconductor (32) is laterally epitaxial-grown can act as a region where the propagation of penetration dislocation provided by the first layer (31) is restrained. Etching may be made until recesses are formed in the substrate. Indium (In) having an atom radius larger than gallium (Ga), a main constituting element, is doped in a layer acting as the nucleus of ELO. The first semiconductor layer may be a multi-layer formed by a buffer layer and a single crystal layer in a multi-cycle way. |
Application Number
申请号 |
01809470 |
Application Date
申请日 |
2001.03.12 |
| Title 名称 |
Production method of III nitride compound semiconductor and III nitride compound semiconductor element |
Publication Number
公开号 |
1429401 |
Publication Date
公开日 |
2003.07.09 |
| Approval Pub. Date |
2005.08.03 |
Granted Pub. Date |
2005.08.03 |
| International Classification 分类号 |
H01L21/205;H01L21/20;C30B29/38;H01L33/00 |
Applicant(s) Name
申请人 |
Toyoda Gosei Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Koike Masayoshi;Tezen Yuta;Yamashita Hiroshi |
| Attorney & Agent 代理人 |
li xiaoshu wei xiaogang |
| More information 更 多 信 息 |
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