| Original document(18 pages) Authorized document(17 pages) 中文版 |
A low relative permittivity SiOx film excellent in heat resistance and produced without using any alkaline metal and fluorine, a method for transforming an SiOx film with a lower relative permittivity and an improved insulation, and a semiconductor device free of crack and separation and highly reliable by using such a low relative permittivity SiOx film as an interlayer insulating film for metallic interconnection are disclosed. The low relative permittivity film is characterized in that it is made of a porous material the major constituent of which is SiOx (where 1.8>= X>= 1.0), and the relative permittivity at 1 MHz is 3 or less. |
Application Number
申请号 |
01809332 |
Application Date
申请日 |
2001.05.07 |
| Title 名称 |
Low relative permittivity SiOx film, production method, semiconductor device using the same |
Publication Number
公开号 |
1429405 |
Publication Date
公开日 |
2003.07.09 |
| Approval Pub. Date |
2005.04.13 |
Granted Pub. Date |
2005.04.13 |
| International Classification 分类号 |
H01L21/316;C01B33/113;C23C14/10;H01L21/768 |
Applicant(s) Name
申请人 |
Deki Kagaku Kogyo K.K. |
| Address 地址 |
|
| Inventor(s) Name 发明人 |
Morisaki Hiroshi;Imamura Yasuo |
| Attorney & Agent 代理人 |
zhao guohua |
| More information 更 多 信 息 |
|
|
|