Original document(24 pages)  中文版
    A chemical mechanical polishing (hereinafter, referred to as 'CMP') slurry for metal is disclosed, more specifically, method for manufacturing metal line contact plug of semiconductor device using an acidic CMP slurry for oxide film further comprising an oxidizer and a complexing agent, which polishes a metal, an oxide film and a nitride film at a similar speed, thereby easily separates a metal line contact plug.
Application Number
申请号		 02160886 Application Date
申请日		 2002.12.31
Title 名称 Chemical mechanical polishing slurry for metal and method for preparing metal wire contact plug of semiconductor device by the slurry
Publication Number
公开号		 1429873 Publication Date
公开日		 2003.07.16
Approval Pub. Date Granted Pub. Date
International Classification 分类号 C09G1/00;H01L21/28;H01L21/304;H01L21/321;H01L21/768
Applicant(s) Name
申请人		 Hynix Semiconductor Inc.
Address 地址
Inventor(s) Name 发明人 An Gi-Chol;Gwon Pal-Gi;Chong Chung-GV
Attorney & Agent 代理人 bian xinqin wu xiaonan
More information 更  多  信  息


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