Original document(11 pages) Authorized document(12 pages) 中文版
    A method and equipment for controlling the ion concentration in etching cavity in sputter etching technology features that the DC bias voltage of pre-cleaning step in sputter etching technology is read-out and the technological parameters for said pre-cleaning step are regulated according to said DC bias voltage value for making the DC bias voltage vary in a certain range to control the ion concentration in etching cavity.
Application Number
申请号		 01145141 Application Date
申请日		 2001.12.30
Title 名称 Method and device of monitering ion concentration in etching cavity body in sputtering etching process
Publication Number
公开号		 1429929 Publication Date
公开日		 2003.07.16
Approval Pub. Date Granted Pub. Date 2005.11.09
International Classification 分类号 C23F1/04,H01J37/305,H01J37/34
Applicant(s) Name
申请人		 Wanghong Electronic Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Lin Jianjia, Zhou Shiliang
Attorney & Agent 代理人 wang huaqiang
More information 更  多  信  息


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