Original document(20 pages)  中文版
    A method for fabricating a pattern, includes: delineating a mask pattern on at least a portion of an underlying layer; etching a portion of the mask pattern; irradiating an incident light on the mask pattern to which the etching is performed and detecting a reflected light produced by reflecting the incident light after the incident light is transmitted through the mask pattern; obtaining a reflected interference spectrum; and calculating a pattern width of the mask pattern using data of the reflected interference spectrum, the reflected interference spectrum being in a wavelength range of not less than two times a pitch of the mask pattern.
Application Number
申请号		 03134814 Application Date
申请日		 2003.09.24
Title 名称 Producing method of graphic and manufacturing method of semiconductor device
Publication Number
公开号		 1497672 Publication Date
公开日		 2004.05.19
Approval Pub. Date Granted Pub. Date
International Classification 分类号 G01B11/22,G03F7/00,H01L21/027,H01L21/66
Applicant(s) Name
申请人		 Toshiba K.K.
Address 地址
Inventor(s) Name 发明人 Sakai Takayuki, Oiwa Tokusa
Attorney & Agent 代理人 yu jing li zheng

  
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