Original document(25 pages) Authorized document(25 pages) 中文版
    Disclosed is a photoresist composition including a thermal acid generator and a method of forming a pattern using the same. The photoresist composition includes about 100 parts by weight of an alkali-soluble acryl copolymer, about 5-100 parts by weight of 1,2-quinonediazide compound, about 2-35 parts by weight of nitrogen-containing cross-linking agent and about 0.1-10 parts by weight of a thermal acid generator which produces an acid by heat. The photoresist composition is coated on a substrate and dried to form a photoresist layer. The photoresist layer is exposed by using a mask having a predetermined shape. Thus obtained exposed photoresist layer is developed by using an aqueous alkaline solution to form a photoresist pattern. Thus obtained photoresist pattern is heated to be cured without generating thermal reflow.
Application Number
申请号
02145838 Application Date
申请日
2002.10.15
Title 名称 Photoresist composite and pattern forming process with it
Publication Number
公开号
1432871 Publication Date
公开日
2003.07.30
Approval Pub. Date 2007.03.21 Granted Pub. Date 2007.03.21
International Classification 分类号 G03F7/008;G03F7/00
Applicant(s) Name
申请人
Samsung Electronics Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Lee Wu-Kyung;Gang Sung-Chul;Choo Chin-Ho
Attorney & Agent 代理人 jia jinghuan song li
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