| Original document(25 pages) Authorized document(25 pages) 中文版 |
Disclosed is a photoresist composition including a thermal acid generator and a method of forming a pattern using the same. The photoresist composition includes about 100 parts by weight of an alkali-soluble acryl copolymer, about 5-100 parts by weight of 1,2-quinonediazide compound, about 2-35 parts by weight of nitrogen-containing cross-linking agent and about 0.1-10 parts by weight of a thermal acid generator which produces an acid by heat. The photoresist composition is coated on a substrate and dried to form a photoresist layer. The photoresist layer is exposed by using a mask having a predetermined shape. Thus obtained exposed photoresist layer is developed by using an aqueous alkaline solution to form a photoresist pattern. Thus obtained photoresist pattern is heated to be cured without generating thermal reflow. |
Application Number 申请号 |
02145838 |
Application Date 申请日 |
2002.10.15 |
| Title 名称 |
Photoresist composite and pattern forming process with it |
Publication Number 公开号 |
1432871 |
Publication Date 公开日 |
2003.07.30 |
| Approval Pub. Date |
2007.03.21 |
Granted Pub. Date |
2007.03.21 |
| International Classification 分类号 |
G03F7/008;G03F7/00 |
Applicant(s) Name 申请人 |
Samsung Electronics Co., Ltd. |
| Address 地址 |
|
| Inventor(s) Name 发明人 |
Lee Wu-Kyung;Gang Sung-Chul;Choo Chin-Ho |
| Attorney & Agent 代理人 |
jia jinghuan song li |
| More information 更 多 信 息 |
|
| Related patents information |
|
|
|
|
|
|