| Original document(20 pages) Authorized document(20 pages) 中文版 |
Disclosed is a photoresist composition having a good sensitivity and residual layer characteristic and a method of forming a pattern using the same. The photoresist composition includes 5-30% by weight of a polymer resin, 2-10% by weight of a photosensitive compound, 0.1-10% by weight of a sensitivity enhancing agent, 0.1-10% by weight of a sensitivity restraining agent and 60-90% by weight of an organic solvent. A photoresist layer is formed by coating the photoresist composition on a substrate and then drying the coated photoresist composition. Then, thus obtained photoresist layer is exposed by using a mask having a predetermined pattern. Then, a photoresist pattern is formed by developing thus exposed photoresist layer. The photoresist pattern exhibits a uniform layer thickness and critical dimension. |
Application Number
申请号 |
02150451 |
Application Date
申请日 |
2002.11.12 |
| Title 名称 |
Photoresist composite and pattern forming process with it |
Publication Number
公开号 |
1432872 |
Publication Date
公开日 |
2003.07.30 |
| Approval Pub. Date |
2007.01.24 |
Granted Pub. Date |
2007.01.24 |
| International Classification 分类号 |
G03F7/012;G03F7/038;G03F7/16;H01L21/027 |
Applicant(s) Name
申请人 |
Samsung Electronice Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Lee Wu-Kyung;Gang Sung-Chul;Choo Chin-Ho |
| Attorney & Agent 代理人 |
jia jinghuan song li |
| More information 更 多 信 息 |
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