Original document(17 pages) Authorized document(17 pages) 中文版
    Photoresistor pattern is formed on substrate and ions are implanted on the photoresistor pattern with ion density on the side wall of the photoresistor pattern being greater than that in the top of the photoresistor pattern. The photoresistor pattern is so treated that the ion density on the side wall of the photoresistor pattern is equal basically to that in the top of the photoresistor pattern. One reaction layer is formed to cover the photoresistor pattern and one copmlex layer is formed through the reaction between the reaction layer and the ions. The unreacted part in the reaction layer is eliminated. The said photoresistor pattern can be processed through heat treatment and/or light irradiation before or after forming the reaction layer.
Application Number
申请号		 02101889 Application Date
申请日		 2002.01.14
Title 名称 Method of eliminating contour distortion in planar printing process with chemical contraction for raising definition
Publication Number
公开号		 1432876 Publication Date
公开日		 2003.07.30
Approval Pub. Date Granted Pub. Date 2005.06.08
International Classification 分类号 G03F7/26
Applicant(s) Name
申请人		 Wanghong Electronics Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Xu Weihua
Attorney & Agent 代理人 ren yongwu
More information 更  多  信  息


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