| Original document(111 pages) Authorized document(100 pages) 中文版 |
There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5x10<-5>qgamma (mm) given with respect to a surface tension gamma (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5x10<-5>(m.sec/N). |
Application Number
申请号 |
03102108 |
Application Date
申请日 |
2003.01.30 |
| Title 名称 |
Film forming method/device, image-forming method and simeconductor device mfg. method |
Publication Number
公开号 |
1435863 |
Publication Date
公开日 |
2003.08.13 |
| Approval Pub. Date |
2006.06.28 |
Granted Pub. Date |
2006.06.28 |
| International Classification 分类号 |
H01L21/027;B05C9/12;G03F7/16 |
Applicant(s) Name
申请人 |
Toshiba K.K. |
| Address 地址 |
|
| Inventor(s) Name 发明人 |
Ito Shinichi;Ema Tatsuhiko;Hayasaki Kei |
| Attorney & Agent 代理人 |
chen haigong duan chengen |
| More information 更 多 信 息 |
|
| Related patents information |
|
|
|
|
|
|