| Original document(22 pages) Authorized document(23 pages) 中文版 |
The invention provides apparatus for forming an insulating film which is able to reduce the decrease in the light amount due to the light transmittable window, to process the large scale base plate, and to improve the oxidation speed. In apparatus for forming an insulating film on a semiconductor surface by oxidizing the surface of the semiconductor as a substrate 6 by means of oxygen atom active species generated when irradiating a N2+O2 mixed gas 10 including at least oxygen with the light emitted from a xenon excimer lamp 1, wherein there are provided a gas intake port 8 and a gas exhaust port 9, by both of which the pressure of the atmosphere in the light source portion 2 sealed with a nitrogen gas absorbing no light from the xenon excimer lamp 1 at an atmospheric pressure is kept approximately equal to the pressure of the N2+O2 mixed gas 10 surrounding the surface portion of the substrate 6. |
Application Number
申请号 |
03102980 |
Application Date
申请日 |
2003.01.24 |
| Title 名称 |
Insulation film mfg. device |
Publication Number
公开号 |
1435865 |
Publication Date
公开日 |
2003.08.13 |
| Approval Pub. Date |
2006.01.04 |
Granted Pub. Date |
2006.01.04 |
| International Classification 分类号 |
H01L21/31;H01L21/469 |
Applicant(s) Name
申请人 |
Liquid Crystal Sophisticated Tech. Dev. Center Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Nakata Yukihiko;Azuma Masafumi;Okamoto Tetsuya |
| Attorney & Agent 代理人 |
xu shenmin |
| More information 更 多 信 息 |
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