An objective is to provide a single crystal silicon carbide thin film is inexpensively and easily formed on an SOI substrate. The manufacturing method comprises the steps of: (1) placing in a furnace 200 an SOI substrate 100 having a surface silicon layer 130 of thickness no greater than 10nm and having a buried insulator layer 120, and increasing the temperature of the atmosphere within furnace 200 while supplying a mixture of hydrogen gas G1 and hydrocarbon gas G2 into furnace 200 so that surface silicon layer 130 is metamorphosed into single crystal silicon carbide thin film 140; (2) depositing a carbon thin film 150 on thin film 140 by excessively carrying out the first step; (3) replacing mixed gas (G1+G2) with an inert gas G4 containing oxygen gas G3 mixed in a predetermined ratio and heating SOI substrate 100 to no less than 550 DEG C to remove carbon thin film 150 through etching; (4) replacing inert gas G4 containing oxygen gas G3 with a pure inert gas G4 and increasing the temperature of the atmosphere within furnace 200 to a predetermined temperature; and (5) supplying hydrogen gas G1 and a silane-based gas G5 into furnace 200 and maintaining the predetermined temperature of the atmosphere so that a new single crystal silicon carbide thin film 160 grows on the surface of said SOI substrate 100. |