Original document(16 pages) Authorized document(16 pages) 中文版
    A process for preparing high-voltage element includes generating grid structure on a substrate, the first thermal step, generating the first doped region in the substrate at both sides of said grid structure, generating a gap wall at side of said grid structure, generating an oxide layer on the grid structure and doped region, the second thermal step, and generating the second doped region in the substrate at both side of gap wall.
Application Number
申请号		 02103102 Application Date
申请日		 2002.01.30
Title 名称 Method for mfg. high voltage element
Publication Number
公开号		 1435867 Publication Date
公开日		 2003.08.13
Approval Pub. Date 2006.06.21 Granted Pub. Date 2006.06.21
International Classification 分类号 H01L21/336,H01L21/265,H01L21/324
Applicant(s) Name
申请人		 Wanghong Electronics Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Liu Muyi, Fan Zuohong
Attorney & Agent 代理人 wang huaqiang
More information 更  多  信  息


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