Original document(42 pages) Authorized document(42 pages) 中文版
    The invention can prevent a capacitor insulating film containing a ferromagnetic material of a metal oxide body from deteriorating its electrical properties due to the moisture discharged from an interlayer insulating film through a thermal treatment. A capacitor element 108 containing a capacitor insulating film 106 of a metal oxide is formed on a board 101. Then, an interlayer insulating film 109A of silicon oxide is deposited on the capacitor element 108, and then a barrier film 110B electrically connected to the capacitor element 108 is formed on the interlayer insulating film 109A. When the board 101 where the barrier film 110B is formed is transferred in an after process, the board 101 where the interlayer insulating film 109A is exposed is housed in a quartz housing case 20 whose inside is hermetically sealed up so as to be kept lower in moisture content with a moisture absorbent than the outside in a transfer time or a standby time necessary before or after it is transferred.
Application Number
申请号
03101674 Application Date
申请日
2003.01.14
Title 名称 Semiconductor device mfg. method
Publication Number
公开号
1435877 Publication Date
公开日
2003.08.13
Approval Pub. Date 2007.02.14 Granted Pub. Date 2007.02.14
International Classification 分类号 H01L21/82;H01L27/04
Applicant(s) Name
申请人
Matsushita Electric Industrial Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Ito Toyoji
Attorney & Agent 代理人 wang huimin
More information 更  多  信  息


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