Non-gate-comtrolled diode element electrostatic discharge protection circuit and mfg. method thereof

Original document(30 pages) 中文版

A non-gate-controlled diode structure of insulator-base epitaxial silicon is composed of an insulator-base epitaxial silicon substrate consiting of substrate, insulating layer and silicon layer, a pair of isolating structures in said silicon layer to form a trap region between isolating structures in silicon layer, the type-1 ion injection region and the type-2 ion injection region. It can be used in electrostatic protection circuit. Its preparing process is also disclosed.

Application Number
申请号

02141287

Application Date
申请日

2002.07.05

Title 名称

Non-gate-comtrolled diode element electrostatic discharge protection circuit and mfg. method thereof

Publication Number
公开号

1435883

Publication Date
公开日

2003.08.13

Approval Pub. Date

Granted Pub. Date

International Classification 分类号

H01L21/84,H01L23/60,H01L27/12,H01L29/861

Applicant(s) Name
申请人

Lianhua Electronics Co., Ltd.

Address 地址

Inventor(s) Name 发明人

Ke Mingdao, Hong Gengang

Attorney & Agent 代理人

wang zhisen huang xiaolin

More information 更多信息

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