Original document(19 pages) Authorized document(19 pages) 中文版
    A test element and method for mask-type ROM in order to find its leakage path is characterized by that said test element is composed of several bit lines on a substrate and several character lines perpendicular to said bit lines. The both ends of each bit line are not covered by character lines.
Application Number
申请号
02102847 Application Date
申请日
2002.01.28
Title 名称 Screen read-only memory testing element and method
Publication Number
公开号
1435889 Publication Date
公开日
2003.08.13
Approval Pub. Date 2006.11.29 Granted Pub. Date 2006.11.29
International Classification 分类号 H01L27/112,H01L21/66,H01L21/824,G01R31/28
Applicant(s) Name
申请人
Wanghong Electronics Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Fan Zuohong, Ye Yanhong
Attorney & Agent 代理人 wang huaqiang
More information 更  多  信  息


 Related patents information
Non-volatility memory structure
Manufacturing method of flash storage having separated floating grid and its structure
Method for making substrate/silicone oxide/silicon nitride/silcon oxide/silicon module
Method for mfg. semiconductor devcie used in system chip
Structure and manufacture of shaded ROM
Method for reducing device size using reducing drain electrode inplanting range
Method for manufacturing double-diffused drain electrode
SNNNS non-volatile memory unit data writing-in and deleting method
Non-volatile memory assembly with multiple gate-pole insalation layers
Non-valatile memory structure with nitride tunnel penetrating layer
Google
Note:All patent data come from State Intellectual Property Office of the People's Republic of China. If there were discrepancies between here and the State Intellectual Property office, the later is more accurate. The patent data is only for public exchange and learning purposes. We are not responsible for the adverse consequences with unverified use of the data.