Original document(13 pages)  中文版
    A semiconductor element structure is a MOS one with enclosed hollow gate structure on a semiconductor substrate to form a cavity. The dielectric layer of gate is positioned between said gate and substrate. The drain region is in said cavity in the semiconductor substrate. The source region surrounds said gate in the semiconductor substrate.
Application Number
申请号		 02103347 Application Date
申请日		 2002.01.29
Title 名称 Semiconductor element structure
Publication Number
公开号		 1435895 Publication Date
公开日		 2003.08.13
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L29/78
Applicant(s) Name
申请人		 Wanghong Electronics Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Xie Zongxuan, Zhang Yaowen
Attorney & Agent 代理人 wang huaqiang
More information 更  多  信  息


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