| Original document(31 pages) Authorized document(29 pages) 中文版 |
The invention provides a method of manufacturing a semiconductor device by which single-crystal layers adequately usable for the elevated source drain technology can be formed on diffusion layers at a low temperature, and to provide a semiconductor device which is provided with silicide layers having uniform thicknesses and quality, can maintain a small contact resistance between the diffusion layers and an electrode, and can be made smaller in size. A semiconductor device comprises: a semiconductor substrate; a gate insulating film formed on the top surface of the semiconductor substrate; a gate electrode formed on the gate insulating film; diffusion layers formed in the semiconductor substrate to be used a source layer and a drain layer; and a silicide layer formed to overlie the diffusion layers; wherein an oxygen concentration peak, where oxygen concentration is maximized, is at a level lower than said top surface in a cross-section taken along a plane perpendicular to said top surface. |
Application Number
申请号 |
03102090 |
Application Date
申请日 |
2003.01.29 |
| Title 名称 |
Semiconductor device and mthod for mfg. same |
Publication Number
公开号 |
1435896 |
Publication Date
公开日 |
2003.08.13 |
| Approval Pub. Date |
2006.01.18 |
Granted Pub. Date |
2006.01.18 |
| International Classification 分类号 |
H01L29/78;H01L27/04;H01L21/322 |
Applicant(s) Name
申请人 |
Toshiba K.K. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Miyano Kiyotaka;Ouchi Kazuya;Mizushima Ichiro |
| Attorney & Agent 代理人 |
chen haigong duan chengen |
| More information 更 多 信 息 |
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