| Original document(15 pages) Authorized document(15 pages) 中文版 |
A method of manufacturing a semiconductor component includes providing a substrate (110) with a surface (119), providing a layer (120) of undoped gallium arsenide over the surface of the substrate, forming a gate contact (210) over a first portion of the layer, and removing a second portion of the layer. |
Application Number
申请号 |
01811030 |
Application Date
申请日 |
2001.05.10 |
| Title 名称 |
Method for mfg. semiconductor device and semiconductor device thereby |
Publication Number
公开号 |
1436367 |
Publication Date
公开日 |
2003.08.13 |
| Approval Pub. Date |
2005.06.08 |
Granted Pub. Date |
2005.06.08 |
| International Classification 分类号 |
H01L21/337;H01L29/80 |
Applicant(s) Name
申请人 |
Motorola, Inc. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
William C. Peatman;Eric S. Johnson;Adolfo C. Reyes |
| Attorney & Agent 代理人 |
zhu haibei |
| More information 更 多 信 息 |
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