Original document(17 pages) Authorized document(17 pages) 中文版
    A titanium layer and a titanium nitride layer are successively laminated on a substrate and a group III nitride compound semiconductor layer is further formed thereon. When the titanium layer is removed in the condition that a sufficient film thickness is given to the titanium nitride layer, a device having the titanium nitride layer as a substrate is obtained.
Application Number
申请号		 01810990 Application Date
申请日		 2001.07.18
Title 名称 Group ?nitride compound semiconductor device
Publication Number
公开号		 1436375 Publication Date
公开日		 2003.08.13
Approval Pub. Date 2005.05.04 Granted Pub. Date 2005.05.04
International Classification 分类号 H01L33/00
Applicant(s) Name
申请人		 Toyoda Gosei Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Shibata Naoki;Senda Masanobu
Attorney & Agent 代理人 liu xiaofeng
More information 更  多  信  息


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