Original document(30 pages)  中文版
    The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.
Application Number
申请号		 03802592 Application Date
申请日		 2003.03.31
Title 名称 Method for forming underlying insulation film
Publication Number
公开号		 1620720 Publication Date
公开日		 2005.05.25
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/316
Applicant(s) Name
申请人		 Tokyo Electron Ltd.
Address 地址
Inventor(s) Name 发明人 Sugawara Takuya, Tada Yoshihide
Attorney & Agent 代理人 liu chunlei

  
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