Original document(88 pages)  中文版
    According to some embodiments, a capacitor includes a storage conductive pattern, a storage electrode having a complementary member enclosing a storage conductive pattern so as to complement an etch loss of the storage electrode, a dielectric layer disposed on the storage electrode, and a plate electrode disposed on the dielectric layer. Because the complementary member compensates for the etch loss of the storage electrode during several etching processes, the deterioration of the structural stability of the storage electrode may be prevented. Additionally, because the complementary member is formed on an upper portion of the storage electrode, the storage electrode may have a sufficient thickness to enhance the electrical characteristics of the capacitor that includes the storage electrode.
Application Number
申请号
200410097394 Application Date
申请日
2004.11.29
Title 名称 Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing same
Publication Number
公开号
1638131 Publication Date
公开日
2005.07.13
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L27/108;H01L21/8242
Applicant(s) Name
申请人
Samsung Electronics Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Park Je-min;Park Jin-jun
Attorney & Agent 代理人 lin yuqing xie lina
More information 更  多  信  息


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