Original document(32 pages)  中文版
    A bipolar transistor is composed of a collector region, a base region connected to the collector region, an emitter region connected to the base region, an emitter electrode, a base electrode, and at lease one of first and second resistive layers of granular metal-dielectric material. The first resistive layer is disposed between the emitter region and the emitter electrode, and the second resistive layer is disposed between the base region and the base electrode. The resistivity of granular metal-dielectric material is widely adjustable by a volume ratio of metal granules to a dialectic matrix. This allows the resistive layers to have a sufficiently large perpendicular resistance to avoid thermal runaway with a reduced thickness.
Application Number
申请号
03804551 Application Date
申请日
2003.08.01
Title 名称 Bipolar transistor for avoiding thermal runaway
Publication Number
公开号
1639870 Publication Date
公开日
2005.07.13
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L29/737;H01L21/331
Applicant(s) Name
申请人
Nanoteco Corp.
Address 地址
Inventor(s) Name 发明人 Honjo Kazuhiko;Uchida Kazuo;Kato Shuichi;Morisaki Hiroshi;Nozaki Shinji;Ichinohe Takahisa
Attorney & Agent 代理人 qin chen
More information 更  多  信  息


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Bipolar transistor for avoiding thermal runaway
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