| Original document(15 pages) 中文版 |
This invention belongs to the field of microelectronic technology. It is a kind of method of multi-valued phase transformation memorizer. It uses semiconductor characters of phase transformation membrane material or composite material of other semiconductor material and phase transformation membrane to form semiconductor membrane transistor. It uses characters that phase transformation material can change reversibly under electricity effect to change channeling length of semiconductor membrane transistor so as to achieving storing long number in single memory cell. The membrane transistor can form spatial stereoscopic structure to increase density and do not need to occupy area of silicon substrate. Such, this invention can increase storing density greatly and solve the question of 1T1R structure phase transformation memorizer peripheral circuit occupying too large areas of silicon substrate. |
Application Number
申请号 |
200510111154 |
Application Date
申请日 |
2005.12.05 |
| Title 名称 |
Achieving method for multi-valued phase changing storage device
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Publication Number
公开号 |
1812124 |
Publication Date
公开日 |
2006.08.02 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L29/78,H01L29/02 |
Applicant(s) Name
申请人 |
Fudan Univ. |
| Address 地址 |
200433 |
| Inventor(s) Name 发明人 |
Lin Yinyin, Cai Yanfei, Liao Feifei, Tang Tingao |
| Attorney & Agent 代理人 |
yao jingfang |
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