| Original document(47 pages) 中文版 |
A contact angle for a liquid on a substrate is set by a surface treatment process such that defects do not occur in a thin film pattern. In particular, the contact angle is set in a range of 15 DEG to 45 DEG . By doing this, it is possible to provide a device, a conductive thin film wiring device, and a method for forming a thin film pattern in which defects such as disconnections and short circuits can be prevented in a thin film pattern which is formed by an ink jet method. |
Application Number
申请号 |
200610003698 |
Application Date
申请日 |
2003.09.28 |
| Title 名称 |
Method for forming thin film pattern, thin film manufacturing device, conductive thin film wiring |
Publication Number
公开号 |
1822323 |
Publication Date
公开日 |
2006.08.23 |
| Approval Pub. Date |
|
Granted Pub. Date |
|
| International Classification 分类号 |
H01L21/288,H01L21/3205,H01L21/768,H05K3/12,H05B33/10,B41M3/00 |
Applicant(s) Name
申请人 |
Seiko Epson Corp. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Hasei Hironori |
| Attorney & Agent 代理人 |
li xianglan |
| More information 更 多 信 息 |
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