Storage mode and circuit using ratio as station guide

Original document(16 pages) 中文版

This invention relates to an exclusive multi-state storage way and its related circuit based on a specific element having the ability of writing to multiple resistance values, for example: the phase transformation resistance in a phase transformation storage and the metal-ferroelectric-insulator-semiconductor structure in a ferroelectric storage. Particular demand on the structure of the unit circuit used by the storage is set to realize this storage way.

Application Number 申请号	200510026409	Application Date 申请日	2005.06.02
Title 名称	Storage mode and circuit using ratio as station guide
Publication Number 公开号	1725369	Publication Date 公开日	2006.01.25
Approval Pub. Date		Granted Pub. Date
International Classification 分类号	G11C11/00,G11C11/56,G11C13/00
Applicant(s) Name 申请人	Fudan Univ.
Address 地址	200433
Inventor(s) Name 发明人	Lin Yinyin, Hong Yong, Tang Tingao
Attorney & Agent 代理人	lu fei sheng zhifan

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