| Original document(30 pages) 中文版 |
A TFT substrate includes a base substrate, a gate wiring formed on the base substrate, a gate insulation layer, an activation layer, an oxidation-blocking layer, a data wiring, a protection layer and a pixel electrode. The gate wiring includes a gate line and a gate electrode. The gate insulation layer is formed on the base substrate to cover the gate wiring. The activation layer is formed on the gate insulation layer. The oxidation-blocking layer is formed on the activation layer. The data wiring includes a data line, a source electrode and a drain electrode. The source and drain electrodes are disposed on the oxidation-blocking layer therefore lowering the on-current ('I') for turning on the TFT and increasing the off-current ('I') for turning off the TFT due to the oxidation-blocking layer. |
Application Number
申请号 |
200610056776 |
Application Date
申请日 |
2006.03.06 |
| Title 名称 |
Thin film transistor substrate and manufacturing method |
Publication Number
公开号 |
1832182 |
Publication Date
公开日 |
2006.09.13 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L27/12,H01L21/84 |
Applicant(s) Name
申请人 |
Samsung Electronics Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
Bae Yang-ho, Jeong Chang-oh, Oh Min-seok, Lee Je-hun |
| Attorney & Agent 代理人 |
li wei |
| More information 更 多 信 息 |
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