Original document(16 pages)  中文版
    A MOS solid-state imaging device is provided in which withstand voltage and 1/f noise of a MOS transistor are improved. In the MOS solid-state imaging device whose unit pixel has at least a photoelectric converting portion and a plurality of field effect transistors, the thickness of gate insulating film in a part of the field effect transistors is different from the thickness of gate insulating film in the other field effect transistors among the plurality of the field effect transistors.
Application Number
申请号		 200610058934 Application Date
申请日		 2006.03.08
Title 名称 Solid-state imaging device
Publication Number
公开号		 1832188 Publication Date
公开日		 2006.09.13
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L27/146
Applicant(s) Name
申请人		 Sony Corp.
Address 地址
Inventor(s) Name 发明人 Takagi Noriko
Attorney & Agent 代理人 tao fengbei hou yu
More information 更  多  信  息


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